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Intrinsic Polarization Superjunctions Boost GaN-On-Silicon Power Devices (EPFL) - Semiconductor Engineering

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semiengineering.com 2026-08-30

Researchers from École Polytechnique Fédérale de Lausanne (EPFL) have published a technical paper in Nature Electronics titled 'Intrinsic Polarization Superjunctions in III-Nitride Heterostructures for Efficient Power Electronics.' The study addresses key limitations in gallium nitride (GaN)-based p

Gallium nitride Power devices Silicon substrate III-nitride Superjunction Polarization effect Power electronics Semiconductor materials

SweGaN raises $14M to scale European GaN-on-SiC chip output - Dealroom

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app.dealroom.co 2026-08-17

[News] Germany Launches a Collaborative Project to Develop and Manufacture GaN-on-Silicon MicroLED Microdisplays - LEDinside

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www.ledinside.com 2026-07-07

The German Federal Ministry of Education and Research (BMBF) has launched a new collaborative initiative to develop microLED microdisplays for AR applications under the project name 'microPRO'. This effort involves key players such as ALLOS Semiconductors, Fraunhofer IPMS, Jabil Optics, Mimetik, Mai

German semiconductor industry MicroLED display technology AR applications GaN-on-Silicon Industry 4.0 manufacturing Microdisplay technology German government funding Silicon-compatible process

Atomera (ATOM) Introduces MST Technology to Enhance GaN-on-Silicon Performance for RF Applications - Insider Monkey

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www.insidermonkey.com 2026-06-28

Atomera (NASDAQ: ATOM) introduced its proprietary MST (Modified Surface Treatment) technology on June 4, 2026, aimed at enhancing the performance of GaN-on-Silicon (GaN-on-Si) devices for radio frequency (RF) applications. By inserting a thin, oxygen-modified layer into silicon wafers, the process i

Semiconductor Materials RF Technology GaN-on-Silicon MST Technology Silicon-based Devices 5G Communication 6G Technology Chip Manufacturing

Atomera (ATOM) Introduces MST Technology to Enhance GaN-on-Silicon Performance for RF Applications - Yahoo Finance

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finance.yahoo.com 2026-06-28

Atomera Inc. (NASDAQ: ATOM) introduced its proprietary MST (Modified Surface Treatment) technology on June 4, 2026, aimed at enhancing the performance of GaN-on-Silicon for RF applications. By embedding a thin, oxygen-modified layer into silicon wafers, the approach improves crystal quality and redu

Semiconductor Materials RF Technology GaN-on-Silicon MST Technology Chip Manufacturing 5G Communication 6G Communication Silicon-Based Semiconductors

[News] MIT Announced Breakthrough in GaN-on-Single-Crystal Diamond Thermal Management Technology - TrendForce

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www.trendforce.com 2026-06-22

MIT announced a breakthrough in gallium nitride (GaN)-on-single-crystal diamond thermal management technology, successfully embedding GaN transistors into ultra-thin diamond layers to overcome major thermal bottlenecks in high-power wireless chips. Published at the IEEE International Microwave Sympo

Gallium Nitride Single-crystal Diamond Thermal Management 6G Communications Wireless Power Amplifier Semiconductor Materials Wide-bandgap Semiconductor High-power Electronics

[News] World’s First Mass-Produced GaN-on-Silicon RF Chip for Smart Terminals Surpasses 5 Million Units Shipped - TrendForce

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www.trendforce.com 2026-06-19

The world's first mass-produced gallium nitride-on-silicon (GaN-on-Si) radio frequency (RF) chip for smart terminals has surpassed 5 million units shipped, marking a significant milestone in China’s semiconductor industry. Developed independently by the 55th Research Institute of China Electronics T

GaN-on-Si RF Chip Smart Terminals Semiconductor Manufacturing 6G Communication Space-Air-Ground Network Power Amplifier CETC

Win Semi qualifies 0.12 μm GaN-on-SiC NP12-0B process for 40V operation - Electronics Weekly

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www.electronicsweekly.com 2026-06-10

Atomera addresses parasitic channel losses in GaN-on-Si - Electronics Weekly

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www.electronicsweekly.com 2026-06-09

The RF-ready GaN-on-silicon with lower parasitic losses - EDN - Voice of the Engineer

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news.google.com 2026-06-05

Atomera unveils GaN-on-silicon advance aimed at expanding RF applications - New Electronics

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news.google.com 2026-06-05

[News] China Launches 8-Inch GaN-on-Silicon Micro LED IDM Production Line - LEDinside

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www.ledinside.com 2026-06-05

Recently, West Lake Yanshan Technology officially launched what it claims is the world's first 8-inch GaN-on-Silicon Micro LED IDM mass production line in Deqing, Zhejiang Province. This full-chain IDM facility covers epitaxial growth, chip fabrication, and advanced packaging, enabling closed-loop p

Micro LED Gallium Nitride Silicon-based IDM Model Semiconductor Manufacturing Display Technology Light Extraction Efficiency Chip Packaging

[News] China Launches 8-Inch GaN-on-Silicon Micro LED IDM Production Line - LEDinside

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news.google.com 2026-06-05

Atomera Breakthrough Targets Broader RF Adoption of GaN-on-Silicon - 01net

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www.01net.it 2026-06-05

Atomera's technological breakthrough paves the way for broader adoption of gallium nitride-on-silicon (GaN-on-Si) radio frequency technology. This advancement represents a significant milestone for the semiconductor industry, particularly in 5G communications and power electronics. Gallium nitride,

Gallium Nitride RF Technology Semiconductor Materials Chip Manufacturing Communication Technology 5G Communication Power Devices Integrated Circuits

Atomera reports progress in GaN-on-silicon RF technology By Investing.com - Investing.com Canada

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news.google.com 2026-06-05

Atomera Breakthrough Targets Broader RF Adoption of GaN-on-Silicon - Business Wire

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news.google.com 2026-06-05

Atomera Incorporated Announces New Approach To Gan-On-Silicon For Rf Applications - marketscreener.com

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news.google.com 2026-06-05

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