Semiconductor News & Analysis Feed
87 articles
2026-06-08
za.investing.com
2026-06-08
Investing.com South Africa
Gold prices turn higher as oil prices pare gains, easing some inflation jitters
Wall Street opens higher as stocks rebound from previous session’s sell-off
TORRANCE, Calif. - Navitas Semiconductor (NASDAQ:NVTS) announced today the launch of its UHV-TO-247-4-ISO package designed for high-voltage silicon carbide MOSFETs, according to a press release statement.
The package features over 12mm pin-t
2026-06-08
ca.investing.com
2026-06-08
Investing.com Canada
ca.investing.com
Performing security verification
This website uses a security service to protect against malicious bots. This page is displayed while the website verifies you are not a bot.
Ray ID: a08828421a2ccb7e
Performance and Security by Cloudflare
Privacy
2026-06-08
www.manilatimes.net
2026-06-08
The Manila Times
Navitas Introduces Isolated Through-Hole Package for SiC MOSFETs, Enabling Direct-Cooled Thermal Management
Direct-cooled thermal management offered by a reflow-compatible, isolated thermal pad significantly improves power density, reliability, and efficiency.
Get the latest news delivered to your inbox
Sign up for The Manila Times newsletters
By signing up with an email address, I acknowledge t
2026-06-08
www.quiverquant.com
2026-06-08
Quiver Quantitative
Interactive simulation tool gives engineers visibility into device - level behavior and pairing trade - offs, accelerating power electronics design
SCOTTSDALE, Ariz., June 08, 2026 (GLOBE NEWSWIRE) -- Summary
The onsemi Elite Pairing Studio is an online design environment that simplifies pairing SiC MOSFETs and gate drivers for demanding power electronics applications, including AI data centers,
2026-06-08
www.tradingview.com
2026-06-08
TradingView
News
/
EQS
/
ROHM's SiC MOSFET Adopted in BBU for AI Servers as HVDC Architectures Advance
ROHM's SiC MOSFET Adopted in BBU for AI Servers as HVDC Architectures Advance
2 min read
ROHM Co., Ltd./ Key word(s): Miscellaneous
ROHM's SiC MOSFET Adopted in BBU for AI Servers as HVDC Architectures Advance
08.06.2026 / 09:05 CET/CEST
The issuer is solely responsible for the content of this announceme
2026-06-04
news.google.com
2026-06-04
Semiconductor Today
2026-06-04
news.google.com
2026-06-04
elektroniknet
2026-06-04
www.semiconductor-today.com
2026-06-04
Semiconductor Today
ROHM’s 750V SiC MOSFET adopted in battery backup unit for AI servers
ROHM says that its 750V silicon carbide (SiC) MOSFET has been adopted in a BBU (battery backup unit) for AI server power supplies. With the rise of generative AI, AI server power systems are shifting to higher voltages and rapidly transitioning to HVDC (high-voltage direct current) architectures. In this environment, ROHM’s devi
2026-06-04
www.marketscreener.com
2026-06-04
marketscreener.com
Access Denied
You don't have permission to access "http://www.marketscreener.com/news/mitsubishi-electric-to-start-shipping-5th-generation-sic-mosfet-bare-die-samples-in-june-shares-dow-ce7f5ddcda80f422" on this server.
Reference #18.8cc83017.1780554508.1931ff71
https://errors.edgesuite.net/18.8cc83017.1780554508.1931ff71
2026-06-04
www.01net.it
2026-06-04
01net
www.01net.it
Performing security verification
This website uses a security service to protect against malicious bots. This page is displayed while the website verifies you are not a bot.
Ray ID: a064d4bbdacd86d6
Performance and Security by Cloudflare
Privacy
2026-06-04
www.automotiveworld.com
2026-06-04
Automotive World
Silicon carbide is emerging as a primary performance arena for xEV inverter suppliers, with on-resistance now tied to vehicle range
June 4, 2026
Mitsubishi Electric will begin shipping samples of fifth-generation silicon carbide metal-oxide-semiconductor field-effect transistors (SiC-MOSFETs) in bare die form from late June. The devices target inverters for drive motors and eAxles in electrified
2026-06-04
news.google.com
2026-06-04
Business Wire
2026-06-04
www.daily-tribune.com
2026-06-04
The Daily Tribune News
PREV
Previous
PREVIOUS
Gorilla ROI Launches Shopify Google Sheets Connector, Ending…
Just another WordPress site
NEXT
Next Up
NEXT UP
Jade Biosciences Announces Pricing of Public Offering of Com…
SAN FRANCISCO and VANCOUVER, British Columbia, June 03, 2026…
Mitsubishi Electric to Ship 5th-generation SiC-MOSFET Bare Die Samples
6 hrs ago
Mitsubishi Electric Corporation (TOKYO: 6503) ann
2026-06-04
markets.financialcontent.com
2026-06-04
FinancialContent
Mitsubishi Electric to Ship 5th-generation SiC-MOSFET Bare Die Samples
By:
Mitsubishi Electric Corporation
via
Business Wire
June 03, 2026 at 23:00 PM EDT
ⓘ This article is third-party content and does not represent the views of this site. We make no guarantees regarding its accuracy or completeness.
Industry-leading low on-resistance, approx. 25% less than existing products, enhances xEV power e
2026-06-04
news.google.com
2026-06-04
GlobeNewswire
2026-06-03
www.presseagentur.com
2026-06-03
presseagentur.com
ROHM’s SiC MOSFET Adopted in BBU for AI Servers as HVDC Architectures Advance
Willich-Münchheide, Germany, June 03, 2026 – ROHM has announced that its 750 V SiC MOSFET has been adopted in a BBU (Battery Backup Unit) for AI server power supplies. With the rise of generative AI, AI server power systems are shifting to higher voltages and rapidly transitioning to HVDC (high-voltage direct current) a
2026-06-03
www.bisinfotech.com
2026-06-03
Bisinfotech
Home/ Semiconductor Component/ROHM’s SiC MOSFET Adopted in BBU for AI Servers as HVDC Architectures Advance
ROHM’s SiC MOSFET Adopted in BBU for AI Servers as HVDC Architectures Advance
Vaishali Chauhan June 3, 2026
2 minutes read
ROHM Co., Ltd. has announced that its 750 V SiC MOSFET has been adopted in a BBU (Battery Backup Unit) for AI server power supplies. With the rise of generative AI,
2026-05-31
simplywall.st
2026-05-31
simplywall.st
__fail__
2026-05-29
simplywall.st
2026-05-29
simplywall.st
__fail__
2026-05-28
www.eenewseurope.com
2026-05-28
eeNews Europe
Toshiba has started test-sample shipments of a 1200V trench-gate SiC MOSFET aimed at power supply systems in AI data centres. The TW007D120E is housed in a QDPAK top-side cooled package and is designed to support higher current capability, improved thermal performance and higher power density in the power stage.