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Peer-reviewed study of 443,000 Backblaze hard drives ranks HGST most reliable and Toshiba the least

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tomshardware.com 2026-08-15

A peer-reviewed IEEE study by Christoph Siemroth of the University of Essex and Yeomyung Park of Sungkyunkwan University reanalyzes 12 years of public hard drive data from Backblaze, covering 443,156 drives and over 1.66 million drive-years from 2013 to Q2 2025. The study finds that HGST drives fail

Hard Drive Reliability Data Storage Enterprise Hard Drives Backblaze HGST Seagate WD Toshiba

Toshiba cuts Kioxia stake as memory maker's valuation swings

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digitimes.com 2026-07-26

Mitsubishi Electric seeks September deal on power-chip merger with Toshiba, ROHM

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digitimes.com 2026-07-24

Mitsubishi Electric eyes power-chip merger with Rohm and Toshiba - The Japan Times

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www.japantimes.co.jp 2026-07-19

Toshiba SiC MOSFET samples support 800V AI data centres ... - eeNews Europe

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www.eenewseurope.com 2026-05-28

Toshiba has initiated test-sample shipments of a 1200V trench-gate silicon carbide (SiC) MOSFET specifically designed for power supply systems in AI data centers. The TW007D120E device features a QDPAK top-side cooled package, engineered to deliver higher current capability, enhanced thermal perform

SiC MOSFET AI data centers Power management Toshiba Semiconductor devices Power supply systems Data center infrastructure SiC technology

Toshiba's new SiC MOSFET cuts on-resistance area by 58% for 1,200 V power stages in EV chargers - Charged EVs

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chargedevs.com 2026-05-28

Toshiba has introduced a new silicon carbide MOSFET device that reduces on-resistance area by 58% in 1,200V power applications. This breakthrough is significant for electric vehicle charging technology, where efficiency and power density are critical competitive factors. Traditional silicon-based de

Semiconductor Silicon Carbide MOSFET Electric Vehicle Charger Power Device Toshiba New Energy

Toshiba test-sampling 1200V SiC MOSFET - Electronics Weekly

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www.electronicsweekly.com 2026-05-26

Toshiba Begins Shipping 1200V SiC MOSFET Samples for AI Data Center Power Systems - Machine Maker

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themachinemaker.com 2026-05-25

Toshiba has announced the commencement of shipping 1200V SiC MOSFET samples for AI data center power systems, marking a significant advancement in power semiconductor applications for high-performance computing. As artificial intelligence technology rapidly evolves, data centers require increasingly

SiC MOSFET AI Data Center Power Semiconductor Toshiba Power Management Semiconductor Device Data Center Infrastructure SiC Technology

Toshiba Launches 1200V SiC MOSFET For AI Data Centres - The Exchange Asia

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theexchangeasia.com 2026-05-25

Toshiba's launch of 1200V SiC MOSFET chips for AI data centers represents a significant advancement in semiconductor technology for high-performance computing applications. As AI workloads intensify, data centers require more efficient power management solutions to handle increased computational dem

SiC MOSFET AI Data Centers Toshiba Power Semiconductor Semiconductor Devices Data Center Artificial Intelligence

Toshiba starts test-sample shipments of 1200V trench-gate SiC MOSFET for AI data centers - Semiconductor Today

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www.semiconductor-today.com 2026-05-22

Toshiba samples 1200V SiC MOSFET for AI data centers - Bisinfotech

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www.bisinfotech.com 2026-05-22

Toshiba Starts Shipping Test Samples of 1200V Trench-Gate SiC MOSFET that will Enhance Efficiency in Next-Generation AI Data Centers - ANTARA News

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en.antaranews.com 2026-05-22

Toshiba Ships 1200V SiC MOSFET Samples for AI Data Centers - World Business Outlook

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