Semiconductor News & Analysis Feed
35 articles
2026-07-08
digitimes.com
2026-07-08
AI servers are tightening Taiwan's power component supply chain, lifting demand for MOSFETs, PMICs, cooling motors and power management products even as weak PC demand limits suppliers' ability to pass on higher costs.
2026-07-08
www.electronicsweekly.com
2026-07-08
Electronics Weekly
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2026-06-22
chargedevs.com
2026-06-22
Charged EVs
chargedevs.com
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2026-06-17
chargedevs.com
2026-06-17
Charged EVs
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2026-06-13
www.ad-hoc-news.de
2026-06-13
AD HOC NEWS
Infineon, DE0006231004
Infineon OptiMOS 8 100 V MOSFETs: Efficient power chips for motor drives and battery systems
12.06.2026 - 22:42:16 | ad-hoc-news.de
Infineon’s OptiMOS 8 100 V power MOSFET family targets brushless DC motor drives and battery protection with lower losses, compact packaging, and automotive-ready reliability for designers of e-mobility, power tools, and industrial equipment.
2026-06-12
www.bisinfotech.com
2026-06-12
Bisinfotech
www.bisinfotech.com
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2026-06-12
www.eenewseurope.com
2026-06-12
eeNews Europe
ROHM has developed the TSC3PAK, a top-side cooling package for SiC MOSFETs aimed at high-voltage power conversion in electric vehicles and industrial systems. The 14.00 × 18.58 × 3.50 mm surface-mount package is designed to combine automated mounting with heat dissipation closer to conventional through-hole packages such as TO-247-4L.
2026-06-11
www.newelectronics.co.uk
2026-06-11
New Electronics
www.newelectronics.co.uk
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2026-06-10
www.semiconductor-today.com
2026-06-10
Semiconductor Today
ROHM has developed the TSC3PAK (14.00mm x 18.58mm x 3.50mm) package for silicon carbide (SiC) MOSFETs. Mass production began in June.
Picture: ROHM’s new top-side-cooling package for SiC MOSFETs.
By adopting a top-side heat dissipation structure that places the heat dissipation surface on the top of the package, the new product enables automated mounting while achieving heat dissipation performa
2026-06-10
www.manilatimes.net
2026-06-10
The Manila Times
KYOTO, Japan, June 10, 2026 /PRNewswire/ -- ROHM Co., Ltd. has developed the TSC3PAK (14.00 x 18.58 x 3.50 mm) package for SiC MOSFETs. By adopting a top-side heat dissipation structure that places the heat dissipation surface on the top of the package, the new product enables automated mounting while achieving heat dissipation performance comparable to that of conventional through-hole packages (
2026-06-10
www.marketscreener.com
2026-06-10
marketscreener.com
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2026-06-09
investor.wolfspeed.com
2026-06-09
Wolfspeed
DURHAM, N.C.--(BUSINESS WIRE)-- Wolfspeed, an industry leader in silicon carbide, has introduced its fifth technology generation, demonstrating a substantial performance leap in efficiency for next-generation 1200 V and 750 V automotive and industrial applications.
“With Gen 4, Wolfspeed delivered the switching breakthrough our customers needed, and less than two years later we’re introducing Gen
2026-06-09
www.tradingview.com
2026-06-09
TradingView
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Wolfspeed - Introduces Fifth-Generation Sic Mosfets For 1200 V And 750 V Applications
Wolfspeed - Introduces Fifth-Generation Sic Mosfets For 1200 V And 750 V Applications
RefinitivLess than 1 min read
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2026-06-09
www.bdtonline.com
2026-06-09
Bluefield Daily Telegraph
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2026-06-09
www.voiceofalexandria.com
2026-06-09
Voice of Alexandria
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2026-06-09
www.ncnewsonline.com
2026-06-09
New Castle News
DURHAM, N.C.--(BUSINESS WIRE)--Jun 9, 2026--
Wolfspeed, an industry leader in silicon carbide, has introduced its fifth technology generation, demonstrating a substantial performance leap in efficiency for next-generation 1200 V and 750 V automotive and industrial applications.
This press release features multimedia. View the full release here: https://www.businesswire.com/news/home/202606098762
2026-06-09
www.mymalonetelegram.com
2026-06-09
The Malone Telegram
Wolfspeed Unveils the Industry’s Lowest RDS(ON) Silicon Carbide (SiC) MOSFETs in New Technology Generation
47 mins ago
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Wolfspeed, an industry leader in silicon carbide, has introduced its fifth technology generation, demonstrating a substantial performance leap in efficiency for next-generation 1200 V and 750 V automotive
2026-06-09
finance.yahoo.com
2026-06-09
Yahoo Finance
This is a paid press release. Contact the press release distributor directly with any inquiries.
Wolfspeed Unveils the Industry’s Lowest RDS(ON) Silicon Carbide (SiC) MOSFETs in New Technology Generation
Business Wire
Tue, June 9, 2026 at 3:00 AM PDT 5 min read
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Wolfspeed's Gen 5 SiC MOSFET technology delivers a breakthrough in specific on-resi
2026-06-09
news.google.com
2026-06-09
Business Wire
2026-06-09
www.semiconductor-today.com
2026-06-09
Semiconductor Today
Navitas introduces isolated through-hole package for 1200–3300V SiC MOSFETs
Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA has launched its new UHV‑TO‑247‑4‑ISO package, setting what is claimed to be a new benchmark for high‑performance discrete power devices.
Featuring over 12mm pin-to-pin creepage and greater than 6000V