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Rohm, JP3982800009 Rohm SCT4013DLL 750 V SiC MOSFET: AI-ready power device for modern data centers 12.06.2026 - 15:54:08 | ad-hoc-news.de Rohm's SCT4013DLL 750 V SiC MOSFET targets high-efficiency, high-voltage power stages in AI server battery backup units and industrial systems, combining low loss, compact packaging and robust reliability for demanding data center and power applications. Rohm

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As electricity takes over from fossil fuels in an expanding range of uses, engineers designing systems need switches and power converters capable of handling both elevated source voltages and more severe short-circuit and overvoltage events. Wide-bandgap semiconductors like gallium nitride (GaN) draw significant attention from device designers because their superior breakdown strength and higher t

New research points to safer devices with less loss at low voltages, but problems remain for high-voltage industrial applications. As electrical power displaces fossil fuels in more applications, system designers need switches and power converters that can handle both higher source voltages and more demanding short circuit and overvoltage spikes. Wide-gap semiconductors, such as gallium nitride

New research points to safer devices with less loss at low voltages, but problems remai...

HomeOur products MASTERGAN6 and MASTERGAN7 help democratize GaN power devices thanks to integrated LDOs and new dedicated pins Our products Power June 1, 2026 / 4 minutes of reading / MASTERGAN6, MASTERGAN7 The MASTERGAN6 and MASTERGAN7 are the first ST GaN power devices to include LDOs, rather than relying on external ones, and the first to offer a hard-switching topology capable of tol

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