Semiconductor News & Analysis Feed

The world's first 1,635V silicon carbide (SiC) superjunction MOSFET has been commercialized by AlkaidSemi, a Shanghai-based power semiconductor company, marking a significant breakthrough in high-voltage device performance. The device achieves an extremely low specific on-resistance of 1.27 mΩ⋅cm² a

Researchers from École Polytechnique Fédérale de Lausanne (EPFL) have published a technical paper in Nature Electronics titled 'Intrinsic Polarization Superjunctions in III-Nitride Heterostructures for Efficient Power Electronics.' The study addresses key limitations in gallium nitride (GaN)-based p