Semiconductor News & Analysis Feed

MIT announced a breakthrough in gallium nitride (GaN)-on-single-crystal diamond thermal management technology, successfully embedding GaN transistors into ultra-thin diamond layers to overcome major thermal bottlenecks in high-power wireless chips. Published at the IEEE International Microwave Sympo

Navitas has introduced a new isolated through-hole package, the UHV-TO-247-4-ISO, tailored for 1200V to 3300V GeneSiC silicon carbide MOSFETs. This package delivers module-level performance in a compact discrete form factor, featuring over 6000V integrated isolation and direct-cooled thermal managem

Navitas Semiconductor has introduced a new UHV-TO-247-4-ISO isolated through-hole package designed for 1200V to 3300V SiC MOSFETs, offering enhanced thermal management and power density. The package features integrated aluminum nitride substrate isolation exceeding 6000V, enabling direct-cooled oper

Peking University's School of Integrated Circuits has unveiled a prototype electronic design automation (EDA) tool tailored for Huawei's LogicFolding architecture, a significant step toward domestic chip design autonomy. Unlike conventional 2D design approaches, this tool treats multi-layer chips as

Thermal management has emerged as the primary constraint in high-performance computing and AI accelerator packaging as semiconductor technology advances to more advanced nodes. Modern packaging integrates high-power ASICs with multiple high-bandwidth memory stacks on silicon interposers, creating co