Semiconductor News & Analysis Feed
20 articles
2026-10-17
www.electronicdesign.com
2026-10-17
2026-09-21
www.eletimes.ai
2026-09-21
2026-07-28
news.google.com
2026-07-28
2026-07-14
news.google.com
2026-07-14
2026-07-08
www.electronicsweekly.com
2026-07-08
2026-07-03
seekingalpha.com
2026-07-03
2026-06-18
timestech.in
2026-06-18
Infineon's CIPOS Prime 1200V CoolSiC power modules are now available through Mouser Electronics, a leading NPI distributor for semiconductors and electronic components. Designed for high-performance automotive applications in xEVs, these modules integrate automotive-grade CoolSiC MOSFETs in a compac
2026-06-15
www.ad-hoc-news.de
2026-06-15
ON Semiconductor's newly launched EliteSiC 1200 V MOSFET family is emerging as a core component in next-generation electric vehicle inverters. Built on silicon carbide technology, these devices offer high-voltage handling and fast switching capabilities, significantly reducing conduction and switchi
2026-06-11
www.newelectronics.co.uk
2026-06-11
Nexperia's introduction of 1200V SiC MOSFETs in QDPAK packaging represents a significant advancement in power semiconductor technology, specifically addressing critical thermal management challenges in high-power applications. This development targets key sectors including electric vehicles, industr
2026-06-09
www.tradingview.com
2026-06-09
Wolfspeed has introduced its fifth-generation silicon carbide (SiC) MOSFETs designed for 1200V and 750V applications, marking a significant advancement in power semiconductor technology. These devices leverage the superior thermal stability, high breakdown voltage, and low on-resistance of SiC, maki
2026-06-09
www.semiconductor-today.com
2026-06-09
Navitas has introduced a new UHV-TO-247-4-ISO isolated through-hole package designed for 1200V to 3300V SiC MOSFETs, setting a new benchmark for high-performance discrete power devices. The package features over 12mm creepage distance and more than 6000V integrated isolation, delivering module-like
2026-06-09
www.automotiveworld.com
2026-06-09
Nexperia has introduced 1200 V silicon carbide (SiC) MOSFETs in QDPAK packaging, targeting electric vehicle (EV) and industrial power conversion applications. The new devices deliver up to 3 kW more output power than conventional D2PAK-7 packages under similar thermal conditions, thanks to QDPAK's t
2026-06-03
www.eurekalert.org
2026-06-03
Researchers at the Fraunhofer Institute for Applied Solid State Physics (IAF) have developed a power module based on 1200-V class gallium nitride (GaN) transistors. The module, designed for bidirectional DC charging systems, features an insulating substrate and demonstrates high efficiency, power de
2026-06-01
www.moomoo.com
2026-06-01
2026-05-26
www.electronicsweekly.com
2026-05-26
2026-05-25
themachinemaker.com
2026-05-25
Toshiba has announced the commencement of shipping 1200V SiC MOSFET samples for AI data center power systems, marking a significant advancement in power semiconductor applications for high-performance computing. As artificial intelligence technology rapidly evolves, data centers require increasingly
2026-05-25
theexchangeasia.com
2026-05-25
Toshiba's launch of 1200V SiC MOSFET chips for AI data centers represents a significant advancement in semiconductor technology for high-performance computing applications. As AI workloads intensify, data centers require more efficient power management solutions to handle increased computational dem
2026-05-22
www.semiconductor-today.com
2026-05-22
2026-05-22
www.bisinfotech.com
2026-05-22
2026-05-22
en.antaranews.com
2026-05-22