Semiconductor News & Analysis Feed
53 articles
2026-07-08
www.electronicsweekly.com
2026-07-08
Electronics Weekly
2026-06-23
chargedevs.com
2026-06-23
Charged EVs
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2026-06-22
chargedevs.com
2026-06-22
Charged EVs
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2026-06-17
chargedevs.com
2026-06-17
Charged EVs
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2026-06-16
www.ad-hoc-news.de
2026-06-16
AD HOC NEWS
ON Semiconductor, US6821891035
Onsemi EliteSiC MOSFET promises cooler, more efficient power for demanding designs
16.06.2026 - 17:52:38 | ad-hoc-news.de
Engineers pushing the limits of EV, solar or industrial power stages get a new flagship SiC MOSFET option from Onsemi.
ON Semiconductor, US6821891035
Onsemi EliteSiC MOSFET 1200 V 40 m? aims to become the cool-running heart of your next high-po
2026-06-12
www.ad-hoc-news.de
2026-06-12
AD HOC NEWS
Rohm, JP3982800009
Rohm SCT4013DLL 750 V SiC MOSFET: AI-ready power device for modern data centers
12.06.2026 - 15:54:08 | ad-hoc-news.de
Rohm's SCT4013DLL 750 V SiC MOSFET targets high-efficiency, high-voltage power stages in AI server battery backup units and industrial systems, combining low loss, compact packaging and robust reliability for demanding data center and power applications.
Rohm
2026-06-12
www.eenewseurope.com
2026-06-12
eeNews Europe
ROHM has developed the TSC3PAK, a top-side cooling package for SiC MOSFETs aimed at high-voltage power conversion in electric vehicles and industrial systems. The 14.00 × 18.58 × 3.50 mm surface-mount package is designed to combine automated mounting with heat dissipation closer to conventional through-hole packages such as TO-247-4L.
2026-06-11
www.automotivepowertraintechnologyinternational.com
2026-06-11
Automotive Powertrain Technology International
ROHM has unveiled the TSC3PAK (14.00 x 18.58 x 3.50mm) cooling package for SiC MOSFETs, which adopts a top-side heat dissipation structure that places the heat dissipation surface on the top of the package, enabling automated mounting while achieving heat dissipation performance comparable to that of conventional through-hole packages (TO-247-4L). This contributes to greater efficiency and reliabi
2026-06-11
www.newelectronics.co.uk
2026-06-11
New Electronics
www.newelectronics.co.uk
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2026-06-10
www.semiconductor-today.com
2026-06-10
Semiconductor Today
ROHM has developed the TSC3PAK (14.00mm x 18.58mm x 3.50mm) package for silicon carbide (SiC) MOSFETs. Mass production began in June.
Picture: ROHM’s new top-side-cooling package for SiC MOSFETs.
By adopting a top-side heat dissipation structure that places the heat dissipation surface on the top of the package, the new product enables automated mounting while achieving heat dissipation performa
2026-06-10
www.manilatimes.net
2026-06-10
The Manila Times
KYOTO, Japan, June 10, 2026 /PRNewswire/ -- ROHM Co., Ltd. has developed the TSC3PAK (14.00 x 18.58 x 3.50 mm) package for SiC MOSFETs. By adopting a top-side heat dissipation structure that places the heat dissipation surface on the top of the package, the new product enables automated mounting while achieving heat dissipation performance comparable to that of conventional through-hole packages (
2026-06-10
www.marketscreener.com
2026-06-10
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2026-06-09
www.bisinfotech.com
2026-06-09
Bisinfotech
www.bisinfotech.com
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2026-06-09
www.tradingview.com
2026-06-09
TradingView
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Reuters
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Wolfspeed - Introduces Fifth-Generation Sic Mosfets For 1200 V And 750 V Applications
Wolfspeed - Introduces Fifth-Generation Sic Mosfets For 1200 V And 750 V Applications
RefinitivLess than 1 min read
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2026-06-09
www.semiconductor-today.com
2026-06-09
Semiconductor Today
Navitas introduces isolated through-hole package for 1200–3300V SiC MOSFETs
Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA has launched its new UHV‑TO‑247‑4‑ISO package, setting what is claimed to be a new benchmark for high‑performance discrete power devices.
Featuring over 12mm pin-to-pin creepage and greater than 6000V
2026-06-09
www.electronicsmedia.info
2026-06-09
Electronics Media
ROHM TSC3PAK SiC MOSFET Package Enables High-Efficiency Power Design for EVs
By Electronics Media -
June 9, 2026
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ROHM TSC3PAK SiC MOSFET Package – ROHM has developed the TSC3PAK (14.00 × 18.58 × 3.50mm) package for SiC MOSFETs. By adopting a top-side heat dissipation structure that places the heat dissipation surface on the top of the package, the new product
2026-06-09
www.electronicsmedia.info
2026-06-09
Electronics Media
Navitas Introduces Isolated Through-Hole Package for SiC MOSFETs, Enabling Direct-Cooled Thermal Management
By Electronics Media -
June 9, 2026
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Isolated Through-Hole Package for SiC MOSFETs – Navitas Semiconductor (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors,
2026-06-09
www.automotiveworld.com
2026-06-09
Automotive World
QDPAK's top-side thermal path allows the PCB and semiconductor domains to be managed separately, unlocking more power in less space
June 9, 2026
Nexperia has launched 1200 V silicon carbide (SiC) MOSFETs in QDPAK packaging for electric vehicle (EV) and industrial power conversion, enabling up to 3 kW more output power than conventional D2PAK-7 devices at comparable thermal limits. The portfolio
2026-06-09
digitimes.com
2026-06-09
Onsemi has introduced an online design tool to help engineers match SiC MOSFETs and gate drivers more quickly. The company said the platform could reduce early-stage trial-and-error in power electronics, with potential implications for AI data centers, electric vehicles, industrial systems, and electrification infrastructure worldwide.
2026-06-09
www.semiconductor-today.com
2026-06-09
Semiconductor Today
onsemi introduces Elite Pairing Studio to simplify pairing SiC MOSFETs and gate drivers for power electronics design
Intelligent power and sensing technology firm onsemi of Scottsdale, AZ, USA has announced its Elite Pairing Studio, an industry-first online design tool that enables engineers to move beyond traditional component-level selection to quickly identify recommended combinations of silic